Infineon · Thyristors & Power Discretes · MPN FF450R12ME7B11BPSA1
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| Td(off) | 390ns;470ns;510ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 250ns;270ns;290ns |
| Current - Collector(Ic) | 450A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 350pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.75V@15V,450A |
| Gate Charge(Qg) | 7.2uC@600V |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.5V;1.65V;1.75V |
| Switching Energy(Eoff) | 35mJ;57mJ;69mJ |
20mW 450A 1.2kV FS (Field Stop) IGBT Modules RoHS