Infineon FF450R12ME4B11

Infineon · Thyristors & Power Discretes · MPN FF450R12ME4B11

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Specifications

Pd - Power Dissipation2.25kW
Current - Collector(Ic)675A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)28nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,450A
Operating Temperature-40℃~+150℃

Technical details

2.25kW 675A 1.2kV FS (Field Stop) IGBT Modules RoHS

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