Infineon · Thyristors & Power Discretes · MPN FF400R12KT3E
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| Pd - Power Dissipation | 2kW |
|---|---|
| Current - Collector(Ic) | 580A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 28nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,400A |
| Operating Temperature | -40℃~+125℃ |
2kW 580A 1.2kV IGBT Modules RoHS