Infineon FF300R17ME4

Infineon · Thyristors & Power Discretes · MPN FF300R17ME4

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Specifications

Td(off)730ns
Pd - Power Dissipation1.8kW
Td(on)250ns
Current - Collector(Ic)375A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Reverse Transfer Capacitance (Cres)810pF
Input Capacitance(Cies)24.5nF
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.3V@15V,300A
Operating Temperature-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))1.95V
Switching Energy(Eoff)61mJ

Technical details

1.8kW 375A 1.7kV NPT (Non-Punch Through) IGBT Modules RoHS

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