Infineon FF300R12KS4

Infineon · Thyristors & Power Discretes · MPN FF300R12KS4

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Specifications

Pd - Power Dissipation1.95kW
Td(off)530ns
Td(on)100ns
Current - Collector(Ic)370A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)1.4nF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@12.0mA
Gate Charge(Qg)3.2uC
Operating Temperature-40℃~+125℃
Vce Saturation(VCE(sat))3.85V@300A,15V
Switching Energy(Eoff)15mJ

Technical details

1.95kW 370A 1.2kV IGBT Module Screw Terminals IGBT Modules RoHS

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