Infineon · Thyristors & Power Discretes · MPN FF300R08W2P2B11ABOMA1
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| Pd - Power Dissipation | 20mW |
|---|---|
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 750V |
| Input Capacitance(Cies) | 53nF@50V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.18V@15V,200A |
| Operating Temperature | -40℃~+150℃@(Tj) |
20mW 200A 750V IGBT Modules RoHS