Infineon FF300R07ME4

Infineon · Thyristors & Power Discretes · MPN FF300R07ME4

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Specifications

Pd - Power Dissipation20mW
Current - Collector(Ic)300A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)18.5nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.95V@15V,300A
Operating Temperature-40℃~+150℃@(Tj)

Technical details

20mW 300A 650V FS (Field Stop) IGBT Modules RoHS

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