Infineon · Thyristors & Power Discretes · MPN FF225R65T3E3BPSA1
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| Pd - Power Dissipation | 1000kW |
|---|---|
| Current - Collector(Ic) | 225A |
| Collector-Emitter Breakdown Voltage (Vces) | 5.9kV |
| Input Capacitance(Cies) | 65.6nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.4V@15V,225A |
| Operating Temperature | - |
1000kW 225A 5.9kV FS (Field Stop) IGBT Modules RoHS