Infineon · Thyristors & Power Discretes · MPN FF225R17ME7B11BPSA1
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| Td(off) | 467ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 110ns |
| Current - Collector(Ic) | 225A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Reverse Transfer Capacitance (Cres) | 80pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.85V@15V,225A |
| Gate Charge(Qg) | 2.1uC@15V |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.7V |
| Switching Energy(Eoff) | 37.3mJ |
20mW 225A 1.7kV FS (Field Stop) IGBT Modules RoHS