Infineon · Thyristors & Power Discretes · MPN FF225R12MS4
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| Pd - Power Dissipation | 1.45kW |
|---|---|
| Current - Collector(Ic) | 275A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 15nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.7V@15V,225A |
| Operating Temperature | -40℃~+125℃ |
1.45kW 275A 1.2kV IGBT Modules RoHS