Infineon · Thyristors & Power Discretes · MPN FF225R12ME4P
No reviews yet — be the first to review Infineon FF225R12ME4P.
| Pd - Power Dissipation | 20mW |
|---|---|
| Current - Collector(Ic) | 450A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 13nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,225A |
| Operating Temperature | -40℃~+150℃@(Tj) |
20mW 450A 1.2kV FS (Field Stop) IGBT Modules RoHS