Infineon FF225R12ME4

Infineon · Thyristors & Power Discretes · MPN FF225R12ME4

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Specifications

Td(off)380ns
Pd - Power Dissipation1.05kW
Td(on)160ns
Current - Collector(Ic)320A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)705pF
Input Capacitance(Cies)13nF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.15V@15V,225A
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))2.15V@225A,15V
Switching Energy(Eoff)17mJ

Technical details

IGBT FS (Field Stop) 1.2kV 320A 1050W Screw Terminals

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