Infineon FF200R33KF2C

Infineon · Thyristors & Power Discretes · MPN FF200R33KF2C

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Specifications

Pd - Power Dissipation2.2kW
Operating Temperature-
Current - Collector(Ic)330A
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Input Capacitance(Cies)25nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.25V@15V,200A

Technical details

2.2kW 330A 3.3kV Single IGBTs RoHS

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