Infineon · Thyristors & Power Discretes · MPN FF200R33KF2C
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| Pd - Power Dissipation | 2.2kW |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 330A |
| Collector-Emitter Breakdown Voltage (Vces) | 3.3kV |
| Input Capacitance(Cies) | 25nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.25V@15V,200A |
2.2kW 330A 3.3kV Single IGBTs RoHS