Infineon · Thyristors & Power Discretes · MPN FF200R17KE4
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| Pd - Power Dissipation | 1.25kW |
|---|---|
| Td(off) | 700ns |
| Td(on) | 240ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@8.00mA |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.95V@200A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 35mJ |
IGBT 1.7kV 200A 1250W Screw Terminals