Infineon · Thyristors & Power Discretes · MPN FF200R12MT4
No reviews yet — be the first to review Infineon FF200R12MT4.
| Pd - Power Dissipation | 1.05kW |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 295A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 14nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
1.05kW 295A 1.2kV FS (Field Stop) Single IGBTs RoHS