Infineon · Thyristors & Power Discretes · MPN FF200R12KT4
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | 1.1kW |
| Td(on) | 160ns |
| Current - Collector(Ic) | 320A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@7.6mA |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.75V@200A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 14mJ |
IGBT IGBT Module 1.2kV 320A 1.1kW Screw Terminals