Infineon · Thyristors & Power Discretes · MPN FF200R12KT3E
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| Pd - Power Dissipation | 1.05kW |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 14nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,200A |
| Operating Temperature | -40℃~+125℃ |
1.05kW 1.2kV IGBT Modules RoHS