Infineon · Thyristors & Power Discretes · MPN FF200R12KS4P
No reviews yet — be the first to review Infineon FF200R12KS4P.
| Pd - Power Dissipation | 1.4kW |
|---|---|
| Current - Collector(Ic) | 275A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 13nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.7V@15V,200A |
| Operating Temperature | -40℃~+125℃ |
1.4kW 275A 1.2kV IGBT Modules RoHS