Infineon · Thyristors & Power Discretes · MPN FF200R12KS4
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| Pd - Power Dissipation | 1.4kW |
|---|---|
| Td(off) | 530ns |
| Td(on) | 100ns |
| Current - Collector(Ic) | 275A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 850pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@8mA |
| Operating Temperature | -40℃~+125℃ |
| Vce Saturation(VCE(sat)) | 3.85V@200A,15V |
| Switching Energy(Eoff) | 12mJ |
| Turn-On Energy (Eon) | 19mJ |
1.4kW 275A 1.2kV IGBT Module Screw Terminals IGBT Modules RoHS