Infineon FF200R12KE4P

Infineon · Thyristors & Power Discretes · MPN FF200R12KE4P

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Specifications

Current - Collector(Ic)200A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)14nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.15V@15V,200A
Operating Temperature-40℃~+150℃

Technical details

200A 1.2kV FS (Field Stop) IGBT Modules RoHS

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