Infineon FF1800R23IE7BPSA1

Infineon · Thyristors & Power Discretes · MPN FF1800R23IE7BPSA1

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Specifications

Current - Collector(Ic)1.8kA
Collector-Emitter Breakdown Voltage (Vces)1.5kV
Input Capacitance(Cies)420nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.26V@15V,1.8kA
Operating Temperature-40℃~+150℃@(Tj)

Technical details

1.8kA 1.5kV IGBT Modules RoHS

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