Infineon · Thyristors & Power Discretes · MPN FF1800R12IE5P
No reviews yet — be the first to review Infineon FF1800R12IE5P.
| Pd - Power Dissipation | 20mW |
|---|---|
| Current - Collector(Ic) | 1.8kA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 98.5nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
20mW 1.8kA 1.2kV FS (Field Stop) IGBT Modules RoHS