Infineon · Thyristors & Power Discretes · MPN FF150R12KS4B2HOSA1
No reviews yet — be the first to review Infineon FF150R12KS4B2HOSA1.
| Pd - Power Dissipation | 1.25kW |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 225A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 11nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.7V@15V,150A |
1.25kW 225A 1.2kV Single IGBTs RoHS