Infineon FF150R12KS4

Infineon · Thyristors & Power Discretes · MPN FF150R12KS4

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Specifications

Pd - Power Dissipation1.25kW
Td(off)530ns
Td(on)100ns
Current - Collector(Ic)225A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)500pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@6mA
Operating Temperature-40℃~+125℃
Vce Saturation(VCE(sat))3.7V@150A,15V
Switching Energy(Eoff)11mJ
Turn-On Energy (Eon)14.5mJ

Technical details

1.25kW 225A 1.2kV Screw Terminals IGBT Modules RoHS

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