Infineon · Thyristors & Power Discretes · MPN FF1200R17KE3
No reviews yet — be the first to review Infineon FF1200R17KE3.
| Pd - Power Dissipation | 595kW |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 110nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+125℃ |
595kW 1.7kV IGBT Modules RoHS