Infineon · Thyristors & Power Discretes · MPN FF100R12RT4
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| Td(off) | 300ns |
|---|---|
| Pd - Power Dissipation | 555W |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 130ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 270pF |
| Input Capacitance(Cies) | 6.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@3.80mA |
| Vce Saturation(VCE(sat)) | 2.15V@100A,15V |
| Switching Energy(Eoff) | 6mJ |
| Turn-On Energy (Eon) | 6.5mJ |
555W 100A 1.2kV Screw Terminals Single IGBTs RoHS