Infineon · Thyristors & Power Discretes · MPN FF100R12KS4
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| Td(off) | 530ns;550ns |
|---|---|
| Pd - Power Dissipation | 780W |
| Td(on) | 100ns;110ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 420pF |
| Input Capacitance(Cies) | 6.5nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V |
| Operating Temperature | -40℃~+125℃ |
| Vce Saturation(VCE(sat)) | 3.2V;3.85V |
| Switching Energy(Eoff) | 7.7mJ |
| Turn-On Energy (Eon) | 9.5mJ |
780W 150A 1.2kV IGBT Modules RoHS