Infineon · Thyristors & Power Discretes · MPN FD800R45KL3KB5
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| Td(off) | 6.6us;6.9us |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 580ns;600ns |
| Current - Collector(Ic) | 800A |
| Collector-Emitter Breakdown Voltage (Vces) | 4.5kV |
| Reverse Transfer Capacitance (Cres) | 3.1nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V |
| Gate Charge(Qg) | 26.5uC@2800V |
| Operating Temperature | -50℃~+125℃ |
| Vce Saturation(VCE(sat)) | 2.5V;3.1V |
| Switching Energy(Eoff) | 2.8J;3.4J |
800A 4.5kV FS (Field Stop) IGBT Modules RoHS