Infineon · Thyristors & Power Discretes · MPN FD800R33KF2C
No reviews yet — be the first to review Infineon FD800R33KF2C.
| Pd - Power Dissipation | 9.6kW |
|---|---|
| Operating Temperature | - |
| Collector-Emitter Breakdown Voltage (Vces) | 3.3kV |
| Input Capacitance(Cies) | 100nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.25V@15V,800A |
9.6kW 3.3kV Single IGBTs RoHS