Infineon FD800R17KE3B2

Infineon · Thyristors & Power Discretes · MPN FD800R17KE3B2

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Specifications

Pd - Power Dissipation5.2kW
Operating Temperature-40℃~+125℃@(Tj)
Current - Collector(Ic)1.2kA
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)72nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.45V@15V,800A

Technical details

5.2kW 1.2kA 1.7kV Single IGBTs RoHS

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