Infineon FD800R17HP4KB2

Infineon · Thyristors & Power Discretes · MPN FD800R17HP4KB2

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Specifications

Pd - Power Dissipation5.2kW
Current - Collector(Ic)800A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)65nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.25V@15V,800A
Operating Temperature-40℃~+150℃

Technical details

5.2kW 800A 1.7kV IGBT Modules RoHS

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