Infineon FD600R17KE3B2

Infineon · Thyristors & Power Discretes · MPN FD600R17KE3B2

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Specifications

Pd - Power Dissipation4.3kW
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)54nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.45V@15V,600A
Operating Temperature-40℃~+125℃

Technical details

4.3kW 1.7kV IGBT Modules RoHS

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