Infineon · Thyristors & Power Discretes · MPN FD250R65KE3K
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| Pd - Power Dissipation | - |
|---|---|
| Current - Collector(Ic) | 250A |
| Collector-Emitter Breakdown Voltage (Vces) | 6.5kV |
| Input Capacitance(Cies) | 69nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -50℃~+125℃ |
250A 6.5kV IGBT Modules RoHS