Infineon FD250R65KE3K

Infineon · Thyristors & Power Discretes · MPN FD250R65KE3K

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Specifications

Pd - Power Dissipation-
Current - Collector(Ic)250A
Collector-Emitter Breakdown Voltage (Vces)6.5kV
Input Capacitance(Cies)69nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-50℃~+125℃

Technical details

250A 6.5kV IGBT Modules RoHS

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