Infineon · Thyristors & Power Discretes · MPN FD16001200R17KF6CB2NOSA1
No reviews yet — be the first to review Infineon FD16001200R17KF6CB2NOSA1.
| Current - Collector(Ic) | - |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 105nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+125℃@(Tj) |
1.7kV IGBT Modules RoHS