Infineon · Thyristors & Power Discretes · MPN FD16001200R17HP4KB2
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| Pd - Power Dissipation | 1.05kW |
|---|---|
| Current - Collector(Ic) | 1.6kA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 130nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.25V@15V,1600A |
| Operating Temperature | -40℃~+150℃@(Tj) |
1.05kW 1.6kA 1.7kV IGBT Modules RoHS