Infineon FD16001200R17HP4KB2

Infineon · Thyristors & Power Discretes · MPN FD16001200R17HP4KB2

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Specifications

Pd - Power Dissipation1.05kW
Current - Collector(Ic)1.6kA
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)130nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.25V@15V,1600A
Operating Temperature-40℃~+150℃@(Tj)

Technical details

1.05kW 1.6kA 1.7kV IGBT Modules RoHS

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