Infineon FD1200R17HP4-K_B2

Infineon · Thyristors & Power Discretes · MPN FD1200R17HP4-K_B2

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Specifications

Current - Collector(Ic)1.2kA
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+150℃@(Tj)

Technical details

1.2kA 1.7kV IGBT Modules RoHS

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