Infineon · Thyristors & Power Discretes · MPN FD1000R33HL3K
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| Pd - Power Dissipation | 11.5kW |
|---|---|
| Current - Collector(Ic) | 1kA |
| Collector-Emitter Breakdown Voltage (Vces) | 3.3kV |
| Input Capacitance(Cies) | 190nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.85V@15V,1000A |
| Operating Temperature | -40℃~+150℃ |
11.5kW 1kA 3.3kV FS (Field Stop) IGBT Modules RoHS