Infineon FD1000R33HL3K

Infineon · Thyristors & Power Discretes · MPN FD1000R33HL3K

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Specifications

Pd - Power Dissipation11.5kW
Current - Collector(Ic)1kA
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Input Capacitance(Cies)190nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.85V@15V,1000A
Operating Temperature-40℃~+150℃

Technical details

11.5kW 1kA 3.3kV FS (Field Stop) IGBT Modules RoHS

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