Infineon · Thyristors & Power Discretes · MPN F475R12KS4B11
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| Pd - Power Dissipation | 500W |
|---|---|
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 5.1nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@15V,75A |
| Operating Temperature | -40℃~+125℃@(Tj) |
500W 100A 1.2kV IGBT Modules RoHS