Infineon · Thyristors & Power Discretes · MPN F4250R17MP4B11
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| Current - Collector(Ic) | 370A |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 21nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,250A |
| Operating Temperature | -40℃~+150℃@(Tj) |
370A 1.7kV FS (Field Stop) IGBT Modules RoHS