Infineon · Thyristors & Power Discretes · MPN F423MR12W1M1B11
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| Pd - Power Dissipation | 200mW |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 3.68nF@800V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
200mW 50A 1.2kV Single IGBTs RoHS