Infineon · Thyristors & Power Discretes · MPN F4200R17N3E4
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| Pd - Power Dissipation | 20mW |
|---|---|
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 18nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
20mW 200A 1.7kV FS (Field Stop) IGBT Modules RoHS