Infineon · Thyristors & Power Discretes · MPN F4150R17N3P4B58BPSA1
No reviews yet — be the first to review Infineon F4150R17N3P4B58BPSA1.
| Pd - Power Dissipation | 20mW |
|---|---|
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 12.3nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
20mW 150A 1.7kV FS (Field Stop) IGBT Modules RoHS