Infineon · Thyristors & Power Discretes · MPN F4150R12KS4
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| Pd - Power Dissipation | 960W |
|---|---|
| Current - Collector(Ic) | 180A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 10nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@15V,150A |
| Operating Temperature | -40℃~+125℃ |
960W 180A 1.2kV IGBT Modules RoHS