Infineon · Thyristors & Power Discretes · MPN F3L400R12PT4B26
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| Td(off) | 400ns |
|---|---|
| Pd - Power Dissipation | 2.15kW |
| Td(on) | 200ns |
| Current - Collector(Ic) | 600A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 1.35nF |
| Input Capacitance(Cies) | 25nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Gate Charge(Qg) | 3.3uC@15V |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.75V |
2.15kW 600A 1.2kV IGBT Modules RoHS