Infineon · Thyristors & Power Discretes · MPN F3L400R10W3S7B11
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| Collector-Emitter Breakdown Voltage (Vces) | 950V |
|---|---|
| Input Capacitance(Cies) | 25.2nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.4V@15V,150A |
| Operating Temperature | -40℃~+150℃@(Tj) |
950V IGBT Modules RoHS