Infineon · Thyristors & Power Discretes · MPN F3L25R12W1T4B27
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| Pd - Power Dissipation | 215W |
|---|---|
| Current - Collector(Ic) | 45A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.45nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.25V@15V,25A |
| Operating Temperature | -40℃~+150℃@(Tj) |
IGBT 1.2kV 45A 215W