Infineon · Thyristors & Power Discretes · MPN F3L200R12W2H3B11
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| Td(off) | 320ns;400ns;420ns;250ns;270ns;280ns |
|---|---|
| Pd - Power Dissipation | 600W |
| Td(on) | 140ns;155ns;160ns;55ns;60ns;65ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 700pF;190pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.75V@15V,100A |
| Gate Charge(Qg) | 1.6uC@15V;1uC@15V |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.7V;1.75V;1.45V;1.6V |
| Switching Energy(Eoff) | 3.5mJ;5.3mJ;5.9mJ;3.3mJ;3.1mJ;4.1mJ |
600W 100A 1.2kV IGBT Module IGBT Modules RoHS