Infineon · Thyristors & Power Discretes · MPN F3L150R07W2E3_B11
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| Td(off) | 300ns |
|---|---|
| Pd - Power Dissipation | 335W |
| Td(on) | 85ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 285pF |
| Input Capacitance(Cies) | 9.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@2.4mA |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.9V@150A,15V |
| Switching Energy(Eoff) | 4.15mJ |
| Turn-On Energy (Eon) | 1.2mJ |
335W 150A 650V Through Hole,62.8x56.7mm IGBT Modules RoHS