Infineon · Thyristors & Power Discretes · MPN F3L11MR12W2M1B65
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| Pd - Power Dissipation | 200mW |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 7.36nF@800V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,100A |
200mW 100A 1.2kV Single IGBTs RoHS