Infineon · Thyristors & Power Discretes · MPN F3L100R07W2H3B11BPSA1
No reviews yet — be the first to review Infineon F3L100R07W2H3B11BPSA1.
| Td(off) | 200ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 26ns |
| Current - Collector(Ic) | 70A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 192pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,100A |
| Gate Charge(Qg) | 1uC@15V |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.68V |
| Switching Energy(Eoff) | 1.44mJ |
20mW 70A 650V FS (Field Stop) IGBT Modules RoHS